Thin films and nanostructures

Prof. Dr. Michael Huth

Goethe University, Frankfurt am Main

Thin film growth

MBE system
Molecular beam epitaxy system.

Thin film growth is pivotal for any type of device-oriented research. We employ a broad range of thin film growth methods. These comprise Molecular Beam Epitaxy (MBE), Atomic Layer Deposition (ALD), sputtering and simple evaporation.

For microstructural, topographic and elementalanalysis we apply X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Energy-Dispersive X-ray Analysis (EDX).

MBE-grown epitaxial thin films are needed for our research on unconventional ferromagnetic metals (Skyrmion systems). We also employ MBE growth for organic thin films with ferroelectric properties. Epitaxial Nb thin films are prepared by sputtering. They form the starting material for our research on vortex matter. Atomic Layer Deposition allows for extremely precise control of the layer thickness of thin films. We employ ALD in conjunction with template structures which we prepare by Focused Electron Beam Induced Deposition.